Method and Apparatus for Alignment of a Line-Of-Sight Communications Link

ABSTRACT

Techniques are disclosed for aligning a first optical scope with a second optical scope to achieve a line-of-sight communication link between the two optical scopes. In an example embodiment, each scope can include an optical transceiver and camera. The optical transceiver in the first optical scope can include a light array that is used to emit a bright pulse of light as a flash. The camera in the second optical scope captures this flash in a camera image. The camera image can then be processed to spatially localize the flash relative to a central region of a photodetector array in the optical transceiver of the second optical scope. A control system can then drive a positioning system for the second optical scope to adjust the second optical scope&#39;s positioning so that the second optical scope photodetector array&#39;s central region aligns with the spatially localized flash.

CROSS REFERENCE AND PRIORITY CLAIM TO RELATED PATENT APPLICATION

This patent application claims priority to U.S. provisional patentapplication Ser. No. 62/554,735, filed Sep. 6, 2017, entitled “Methodand Apparatus for Alignment of Line-Of-Sight Communications Link”, theentire disclosure of which is incorporated herein by reference.

INTRODUCTION

The use of free space optical communications (FSOC) for wireless datatransfer via light beams relies on a line-of-sight communication linkbetween transmitter and receiver, and such a line-of-sight communicationlink requires accurate alignment between transmitter and receiver.Failure to properly align the transmitter and receiver can lead to anoisy signal detected by the receiver or even no detection of the signalat the receiver if the misalignment is too great. Achieving accuratealignment can be a challenging task, particularly when there is a longdistance between transmitter and receiver.

For example, optical transmitters and receivers in FSOC systemstypically employ technicians who manually align the various transmittersand receivers. Since such transmitters and receivers are often locatedon high towers or in other hard-to-reach places, manual alignment is notonly slow and inefficient but can also be dangerous for the technicians.

As a solution to this problem in the art, the inventor discloses atechnique for aligning a first optical scope with a second optical scopeto achieve a line-of-sight communication link between the two opticalscopes.

In an example embodiment, each scope can include an optical transceiverand camera. The optical transceiver in the first optical scope caninclude a light array that is used to emit a bright pulse of light as aflash. The camera in the second optical scope captures this flash in acamera image. The camera image can then be processed to spatiallylocalize the flash relative to the cross-hairs of the camera, whereinthese cross-hairs have a relationship that corresponds to a centralregion (e.g., a center point) of a photodetector array in the opticaltransceiver of the second optical scope. A control system can then drivea positioning system for the second optical scope to adjust thepositioning of the second optical scope so that the center of thephotodetector of the second optical scope aligns with the spatiallylocalized flash.

This process can then be repeated but where the light array in thesecond optical scope acts as the flash emitter and the camera in thefirst optical scope captures the image of the flash so that the firstoptical scope can be controllably positioned so that its photodetectorarray's central region aligns with the spatially localized flash fromthe second optical scope.

These alignments can be iteratively repeated until the system determinesthat the two optical scopes are sufficiently aligned.

In an example embodiment, the same light array used by the aligned firstoptical scope to emit the flashes used for alignment can also be used bythe aligned first optical scope to optically transmit a data signal overthe air to the aligned second optical scope with a high signal-to-noiseratio. Similarly, the same light array used by the aligned secondoptical scope to emit the flashes used for alignment can also be used bythe aligned first optical scope to optically transmit a data signal overthe air to the aligned first optical scope with a high signal-to-noiseratio.

In this fashion, the optical scopes with such light arrays and alignmentcapabilities can be used to implement a high-speed wireless datatelecommunications system using point-to-point optical communications.

These and other features and advantages of the present invention will bedescribed hereinafter to those having ordinary skill in the art.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-5 show various views of an example top-emitting implantembodiment.

FIG. 6 shows a view of an example bottom-emitting implant embodiment.

FIGS. 7 and 7A-7C show views of an example top-emitting oxidationembodiment.

FIGS. 8-14 c show various views of an example bottom-emitting oxidationembodiment.

FIG. 15 shows a view of an example microstrip embodiment.

FIG. 16 shows a view of an example phase coherent embodiment.

FIG. 17 shows a view of an example embodiment that employs diffractiveoptical elements.

FIG. 18 shows a view of an example embodiment that employs patterndiffractive grating.

FIG. 19 shows a view of an example microlens embodiment.

FIG. 20 shows a view of an example tenth embodiment.

FIG. 21 shows a view of an example eleventh embodiment.

FIG. 22 shows a view of an example twelfth embodiment.

FIG. 23 shows an example of an additional pattern for a lasing grid withrespect to various embodiments.

FIG. 24 comparatively shows current flow as between an exampleembodiment designed as described herein and that taught by US Pat App.Pub. 2011/0176567.

FIG. 25 shows an example embodiment of a FSOC system that employs firstand second optical scopes for wireless optical data communications witheach other.

FIG. 26 shows an example embodiment of an optical scope for use in thesystem of FIG. 25.

FIG. 27 shows a view of an example light array that can be used by theoptical scope of FIG. 25.

FIG. 28 shows an example process flow for alignment of the opticalscopes of FIG. 25.

FIGS. 29A and 29B show examples of how camera images can be used todetermine the appropriate adjustments to the positioning of an opticalscope needed for achieving alignment with the other optical scope.

FIG. 30 shows an example beam splitting arrangement within an opticalscope, where a first optical path links to a camera and a second opticalpath links to an optical transceiver.

FIG. 31 shows a cross-section of the optical axis with a group of laserarrays and a macro-optical element on axis, where a laser array withinthe larger laser array is flashed and slightly off the optical axis toproduce a beam which is directed slightly off axis.

FIG. 32 shows an example position with multiple optical scopes aimed indifferent directions.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

FIG. 25 shows an example embodiment of a FSOC system 2500 that comprisesfirst and second optical scopes 2502 for wireless optical datacommunications with each other. While FIG. 25 shows two optical scopes2502 in the system 2500, it should be understood that this is only anexample for ease of illustration; the FSOC system 2500 may include largenumbers of geographically-distributed optical scopes 2502 to create alarge scale optical wireless network.

Each optical scope 2502 relies on a line-of-sight communication linkwith another optical scope 2502 for sending/receiving light beams thatcarry data. The optical scopes 2502 can be mounted on a support 2506.Examples of suitable supports 2506 will vary based on where the opticalscope 2502 is positioned; in some instances structures such as poles,towers, platforms, or roofs may be used as supports 2506. For example,in many urban settings, the poles that are used to elevate street lightsmay be desirable for placement of optical scopes 2502 as it is expectedthat the areas near or above streets may be largely occlusion-free forline-of-sight communication links. At the time of set up, each opticalscope 2502 can be roughly aligned with each other based on roughlocation and directional positioning (e.g., via a simple GPS locationand pointing which may rely on a proper orientation of the device to aknown location such as the north star or other GPS coordinates of alandmark or such). This allows the optical scopes 2502 to be visible toeach other, such as via their respective camera's fields of view, topermit subsequent fine-tuned alignment.

Each optical scope 2502 can be adjustably positioned on support 2506 viaa positioning system 2504. Such a positioning system 2504 can beconfigured to controllably change the optical scope 2502's aim in boththe vertical and horizontal dimensions, for example via tilt and panoperations that are capable of rotating the optical scope 2502 in any ofthe x-, y-, and z-dimensions. For example, the positioning system 2504may take the form of a high resolution motor drive system with gimbalmotors that can controllably tilt/pan the optical scope 2502 in adesired manner. In an example embodiment, the gimbals of the positioningsystem 2504 can have a common system of rotation to use any of 3axis-xyz type repositioning to adjust the aim of the optical scope 2502.In other example embodiments, the gimbals may only have two axes ofrotation, as in an equatorial mount.

When the two optical scopes 2502 are aligned, they can wirelesslycommunicate optical data 2510 to each other via the line-of-sightcommunication link. In the example embodiments described in greaterdetail below, it will be assumed that each optical scope 2502 is capableof bi-directional optical data communication; however, it should beunderstood that this need not necessarily be the case as a practitionermay desire a uni-directional data flow where one optical scope isconfigured as a transmitter while the other is configured as a receiver.Furthermore, while FIG. 25 shows a single optical scope 2502 at eachgeographical position, it should be understood that a practitioner maywant to locate multiple, independently-aimed/adjusted optical scopes2502 at each geographical position so that a given geographical positioncan maintain potential line-of-sight links with multiple geographicalpositions. As an example, FIG. 32, which corresponds to FIG. 32C of theabove-referenced and incorporated '444 patent application, shows aplatform that can support several different optical scopes 2502 aimed indifferent directions. In this example, the position 3200 includes 7optical scopes 2502; although it should be understood that more or feweroptical scopes 2502 could be included if desired by a practitioner. Suchan arrangement can support the development of an FSOC mesh network.

FIG. 26 shows an example embodiment of an optical scope 2502. Theoptical scope 2502 can include a camera 2602 and an optical transceiver2604. The optical transceiver 2604 can include a photodetector array2606 for data reception and a light array emitter 2608 for datatransmission.

The optical scope 2502 can also include optics 2610, where the optics2610 can take the form of optical elements for delivering incoming oroutgoing optical signals to the camera 2602, photodetector array 2606,and light array emitter 2608. The optics 2610 can define a relationshipbetween a field of view for the camera 2602, a field of view for thephotodetector array 2606, and a field of view for the light arrayemitter 2608. For example, it is desirable for the camera 2602,photodetector array 2606 and light array emitter 2608 to share a commonfield of view via bore sighting. As such, the optics 2610 may includeone or more beam splitters. However, a practitioner may also choose todefine a known offset relationship between the camera field of view andthe photodetector array field of view rather than commonly bore sightthe two with each other. In such an example embodiment, the alignmentsoftware logic can then take this known offset relationship intoconsideration when assessing how the optical scope should be re-orientedto achieve a desired alignment. Furthermore, the optics 2610 may includetelescoping lenses or the like to provide the optical scope 2502 with anappropriate depth of view.

The optical scope 2502 can also include a control system 2612 thatoperates to process and relay incoming/outgoing data 2622 to/from a datacenter or other remote computer system as well as process images fromcamera 2602 to control alignment operations as discussed below (seecontrol signal 2620 for delivery to the positioning system 2504). Thecontrol system 2612 can take the form of one or more processors that areprogrammed to carry out the operations discussed herein. The controlsystem 2612 may also include a non-transitory computer-readable storagemedium such as memory for storing data as well as program instructions.The control system 2612 may also include a wireless RF transceiver thatallows it to send and receive wireless RF data from one or more remotecomputer systems. For example, the control system 2622 can create alocal area WiFi network with one or more remote computers to send andreceive data. Also, such a wireless RF transceiver and WiFi networkcould be created by the data center if desired by a practitioner.

When used to receive optical data, the optical scope 2502 can receiveincident light 2614 where the incident light 2614 includes an opticalbeam from the other aligned optical scope 2502 (where this optical beamencodes data), and optics 2610 will direct this optical beam to thephotodetector array 2606 (which may include one or more interveningoptical filters to filter out light that would qualify as “noise”relative to the wavelengths where the optical data signal is expected).The photodetector array 2606 converts the incident light into a datasignal that can be processed as digital data by the control system 2612.This data can be relayed to a data center (see 2622) or perhaps relayedto another optical scope 2502 via the optical transmission capabilitiesof the optical scope 2502.

When used to transmit optical data, the control system 2612 drives thelight array emitter 2608 with an appropriate data signal that causes thelight array emitter 2608 to produce beams of light that encode the data.The optics 2610 then direct these beams of light to the other alignedoptical scope 2502 for reception and processing thereby.

FIG. 27 shows a view of an example light array emitter 2608. The lightarray emitter 2608 can include a plurality of laser emitting apertures2700 formed into an array. While the example of FIG. 27 shows a 5×5square array of laser emitting apertures 2700, it should be understoodthat the array can include more laser emitting apertures 2700, and theseapertures 2700 can be formed into virtually any desired shape or pattern(e.g., circular arrays, hexagonal arrays, rectangular arrays, etc.).

The laser array emitter 2608 can be a laser-emitting epitaxial structurehaving a plurality of laser regions within a single mesa structure, eachlaser region including a laser emitting aperture 2700 that produces alight beam in response to a driving data signal from a connectedelectrical waveguide. Examples of devices that can be used as such alaser array are disclosed and described in US Pat. App. Pub.2017/0033535, the entire disclosure of which is incorporated herein byreference and a copy of which is included herewith as Appendix A.Appendix A describes multi-conductive grid-forming laser structures andtheir connections to a high speed electrical waveguide for highfrequency operation. Additional examples of devices that can be used asthe laser array emitter 2608 are disclosed and described in thefollowing U.S. patent applications, the entire disclosures of each ofwhich are incorporated herein by reference: (1) U.S. patent application62/456,476, filed Feb. 2, 2017, and entitled “Methods to Advance LightGrid Structures for Low-Cost Laser Sources”, (2) U.S. patent application62/456,489, filed Feb. 2, 2017, and entitled “Fabrication of Light GridStructures with Wafer Scale Processing”, (3) U.S. patent application62/456,501, filed Feb. 2, 2017, and entitled “High Power Laser GridStructure for Applications over Distance”, (4) U.S. patent application62/456,518, filed Feb. 2, 2017, and entitled “Methods for Advancing HighBrightness Diodes”, (5) U.S. patent application 62/459,061, filed Feb.15, 2017, and entitled “Rigid Lasing Grid Structure Array Configured toScan, Communicate, and Process Materials Using Deformable Light Fields”(6) U.S. patent application Ser. No. 16/011,417, filed Jun. 18, 2018,and entitled “Graphene Lens Structures for Use with Light Engine andGrid Laser Structures”, (7) U.S. patent application Ser. No. 16/102,444,filed Aug. 13, 2018, and entitled “Laser Grid Structures for WirelessHigh Speed Data Transfers”, and (8) U.S. patent application Ser. No.16/102,572, filed Aug. 13, 2018, and entitled “High Power Laser GridStructure”.

Also, the laser array emitter 2608 can be arranged as an array ofmultiple laser-emitting epitaxial structures, each laser-emittingepitaxial structure having a single mesa structure, where the singlemesa structure includes multiple isolated laser regions. In such anarray, the laser array emitter 2608 may have multiple mesa structures,where each mesa structure includes multiple isolated laser regions. Sucha laser grid structure can exhibit high numbers of laser emitters on asmall chip.

FIG. 28 shows an example process flow for alignment of the opticalscopes 2502. In an example embodiment, the alignment of optical scopes2502 achieved by the FIG. 28 process flow can be performed autonomouslyby the system 2500 without manual intervention by human technicians.Generally speaking, the camera 2602 of the optical scopes 2502 willtrack and locate high energy flashes of light from the light emitterarray 2608 of the other optical scope 2502 and use the location of thisflash to adjustably position the optical scope 2502 so that it alignswith the optical scope 2502 that emitted the flash. If necessary, aseries of flashes can be emitted so that the optical scope caniteratively zero in on alignment with the other optical scope 2502.

In FIG. 28, the steps on the left side of the frame are performed by afirst optical scope 2502 while the steps on the right side of the frameare performed by a second optical scope 2502 to achieve alignmentbetween the first and second optical scopes 2502. The process can beginat step 2800 where the first optical scope 2502 flashes its laser arrayemitter 2608 at a specified wavelength. This flash can be achieved bydriving the laser array emitter 2608 such that many or all of its laseremitting apertures 2700 produce beams that, in the aggregate, form abright pulse of light with a sufficiently wide divergence angle so thatthe flash is captured within the field of view of the camera 2602 of thesecond optical scope 2502. The array can shape the flash as asymmetrical shape (e.g., a circle or similar pattern) so that the secondoptical scope 2502 can more easily locate a center point of the flash.The flash center point can then be used as the target for alignment.However, the precise center point need not necessarily be used—instead acentral region of the flash could be used to achieve sufficientalignment for satisfactory signal-to-noise ratio (SNR). Because thelaser array emitters 2608 can provide a wide spread of a high powerbeam, the power can distributed in the wide beam at thereceiver/collector. This results in the SNR being distributed in a moreGaussian beam that can be tolerant to slight misalignments that mayarise as between the central region of the flash/beam and thephotodetector's central region. The laser array emitter 2608 can producethe flash at step 2800 with a high power level due to a thermal functionin the emitter prevents the laser array from overly heating and allowsthe laser array to perform at peak operating conditions, which may be upto 100× the optical average power of the laser array when used totransmit data. This can arise as a result of an operational artifact ofa semiconductor laser or laser array. If the duty cycle is low enough,e.g., typically <1%, the lasers rollover or maximum power out can beincreased by 50 to 100 times the average power out. This feature can beused to produce a high optical power flash for a distant or off-opticalaxis locating signal.

At step 2802, the camera 2602 in the second optical scope 2502 capturesa camera image of the flash from step 2800. At step 2804, the controlsystem 2612 can execute logic that filters out wavelengths of light fromthe camera image other than the known wavelength of the flash. Thisallows the control system 2612 to easily locate the flash in the pixelspace of the camera image. FIG. 29A shows an example camera image 2900where flash 2902 is present. In an example embodiment, the flashwavelength can be 980 nm. In such an example, the filter could employnarrow band filtering so that wavelengths in the range between around960 nm to around 1000 nm are passed (while other wavelengths arerejected; such a filter can be referred to as a 980 nm+/−20 nm filter).However, it should be understood that different wavelengths anddifferent bandpass ranges could be employed. Also, in other exampleembodiments, the filtering could be performed by an optical filterlocated in any of a number of places in the optical path between theinput to the optical scope 2502 and the camera 2602.

At step 2806, the control system 2612 processes the pixels of the cameraimage 2900 to compute the center point 2904 of the located flash 2902 inthe coordinate space of the camera image 2900. However, as noted above,a practitioner may choose to merely locate a central region of the flash2902 rather than the precise center point. The system can use any frameof reference for this computation, although it is preferred that theframe of reference be at the cross-hairs 2906/central point of thecamera image 2900. The cross-hairs 2906 can serve as a proxy for acentral region (e.g., the cross-hairs/center point) of the field of viewfor the photodetector array 2606 that shares the same optical scope 2502as the subject camera 2602 that produced camera image 2900. For example,with reference to FIG. 30, the optical scope 2502 can commonly boresight the camera 2602 and optical transceiver 2604 (with photodetectorarray 2606) via one or more beam splitters 3000 so that the camera 2602and photodetector array 2606 share a commonly-centered field of view.The beam splitter 3000 can be a dichroic optical system that splitsincident light 2614 into two optical paths, with camera 2602 located atone end of a first optical path and the photodetector array 2606 ofoptical transceiver 2604 located at one end of a second optical path.

At step 2808, the control system 2612 checks whether the computed centerpoint 2904 of flash 2902 is on the cross-hairs 2906. If yes, thisindicates that the two optical scopes are largely aligned, and theprocess flow can jump to step 2820 where the alignment can switch to theother optical scope where the second optical scope 2502 becomes theflash emitter and the first optical scope 2502 becomes the flashreceiver. But if step 2808 concludes that the flash center point 2904does not match up with cross-hairs 2906, then the process flow proceedsto step 2810.

At step 2810, the control system 2612 computes the scope movementsneeded to place the cross-hairs 2906 onto the flash center point 2904.For example, as shown by FIG. 29A, the control system 2612 can computethe horizontal displacement 2908 and vertical displacement 2910 for theoptical scope 2502 needed to move cross-hairs 2906 onto flash centerpoint 2904. At step 2812, these horizontal and vertical displacementscan be translated by the control system 2612 into an appropriate controlsignal 2620 for the positioning system 2504 so that the positioningsystem 2504 adjusts the gaze of the optical scope 2502 to achievealignment between the flash center point 2904 and cross-hairs 2906.

After the optical scope 2502 has been adjustably re-oriented at step2812, the process flow returns to step 2800 where the first opticalscope 2502 produces another flash. It should be understood that the aimof the first optical scope 2502 would be held steady for each flash.Also, the first optical scope 2800 can be configured to periodicallyrepeat its flash over intervals that allow for the second optical scope2502 to have sufficient time to perform steps 2802-2812.

After the second flash, the second optical scope 2502 would re-performsteps 2802-2808 as discussed above. As a result of the re-positioningfrom the first instance of step 2812, it is expected that the cameraimage produced as a result of the second instance of step 2802 wouldappear similar to that shown by FIG. 29B (see camera image 2950 whereflash 2952 is largely centered on cross-hairs 2906). In this case, step2808 may conclude that the cross-hairs 2906 are sufficiently alignedwith the second flash's center point so that the process flow proceedsto step 2820. However, if not, further alignments can be performed atsteps 2810-2812 and another iteration of flashing at step 2800 can beperformed.

From step 2820, the second optical scope 2502 performs a flash operationlike that described above for step 2800. Thereafter, the first opticalscope 2502 can perform steps 2822-2832 that correspond to steps2802-2812 described above for the second optical scope 2502.

The system can iteratively repeat these pair-wise alignment operationsuntil the two optical scopes 2502 converge on sufficient alignment withrespect to system-defined criteria.

Also, while FIG. 28 shows that one optical scope 2502 repeats steps2802-2812 until it is aligned with the flash from the other opticalscope 2502 before switching which optical scope serves as the flashemitter and which serves as the flash receiver, it should be understoodthat this switching can be performed after each attempt at alignment sothat the optical scopes 2502 switch off after each iteration of steps2802-2812 (and 2822-2832) on which is the flasher and which is theflashee during the alignment process.

Once aligned via the FIG. 28 process flow, the two optical scopes canthen optically send and receive data to each other via beams produced bythe laser array emitters 2606 and detected by the photodetector arrays2608.

In another example embodiment, the laser array emitter 2608 can bearranged to provide non-mechanical alignments. The laser array emitter2608 can be arranged so that many of the laser emitting regions of thelaser array emitter 2608 direct their light beams in slightly offsetdirections. Different groups of laser regions on the array emitter 2608can thus define their own directional laser arrays. FIG. 31 shows anexample of this, where subarrays 3112 of the laser array emitter 2608can be aimed in slightly different directions that are off the mainoptical axis 3110. FIGS. 17-19 and 22, described below in Appendix A,show example embodiments of laser arrays where diffractive opticalelements, microlenses, and/or macro-lenses are combined with the laserarray structures to achieve light beam outputs that are offset relativeto the main optical axis 3110. In the example embodiment of FIG. 31, itis expected that the offsets for the different subarrays 3112 relativeto the main optical axis 3110 will be very slight, but sufficient todefine a desired overlapping scope of coverage by the light beams fromthe light array emitter 2608. With such an arrangement, if the twooptical scopes 2502 are roughly aligned with each other, furtherfine-tuned alignment may be achieved non-mechanically by sequencingthrough a flashing of each subarray 3112 to find if any of the subarrays3112 are closely aligned with the photodetector array of the otheroptical scope 2502. The receiving optical scope 2502 can check whetherany of the sequenced flashes from the different subarrays 3112 arelargely centered on the camera cross-hairs 2906. If so, the subarray3112 that produced the aligned flash can be tagged as the alignedsubarray 3112 of laser array emitter 2608 and then used for optical datatransmissions to the other optical scope 2502 without the need forfurther mechanical re-positioning of the optical scope 2502 viapositioning system 2504.

Such an arrangement as shown by FIG. 31 could thus be employed in anexample embodiment to achieve final fine-tuned alignment of opticalscopes after an initial rough alignment via mechanical repositioning viapositioning system 2504. Further still, in another example embodiment,if the scope of coverage by the different subarrays 3112 is sufficientlywide and dense (e.g., overlapping), the system could permit opticalalignment without the need for any mechanical re-positioning. In such anembodiment, a practitioner may thus choose to omit the positioningsystem 2504 entirely and instead rely on sequencing through thedifferent subarrays 3112 to find which of the subarrays 3112 is bestaligned with the other optical scope.

While the present invention has been described above in relation toexample embodiments, various modifications may be made thereto thatstill fall within the invention's scope, as would be recognized by thoseof ordinary skill in the art. Such modifications to the invention willbe recognizable upon review of the teachings herein. As such, the fullscope of the present invention is to be defined solely by the appendedclaims and their legal equivalents.

Appendix A—US Pat App Pub 2017/0033535

Laser arrays are becoming important in the field of communications,light detection and ranging (LiDaR), and materials processing because oftheir higher operational optical power and high frequency operation ascompared to single lasers, fiber lasers, diode pumped solid state (DPSS)lasers, and light emitting diodes (LEDs).

Laser arrays are commonly used in printing and communications, but inconfigurations which have a single separate connection to each laserdevice in the array for parallel communication where each laser couldhave a separate signal because it had a separate contact from the otherdevices in the array.

When array elements were tied together and driven with a single signal,the structures had too much capacitance or inductance. This highcapacitance/inductance characteristic slowed the frequency response forthe laser array down, thereby making such laser arrays slower as theyadded more elements. This is evidenced in the referenced works byYoshikawa et al., “High Power VCSEL Devices for Free Space OpticalCommunications”, Proc. of Electronic Components and TechnologyConference, 2005, pp. 1353-58 Vol. 2, and U.S. Pat. No. 5,978,408.

High speed laser arrays based on multi-mesa structures are described inthe inventor's previous work, US Pat App. Pub. 2011/0176567. US Pat App.Pub. 2011/0176567 describes a multi-mesa array of semiconductor lasersand their connections to a high speed electrical waveguide for highfrequency operation. However, the multi-mesa structures described in USPat App. Pub. 2011/0176567 suffers from a number of shortcomings.

One problem with mesa structures as described in US Pat App. Pub.2011/0176567 is they are typically brittle. This is a problem if thereis any mechanical procedure to bond to or touch the laser after the mesais formed. The mesas structures can be as small as 5 to 10 microns indiameter and consist of an extremely fragile material such as GaAs orAlGas, or other similar crystalline materials. These mesas must bebonded after processing and pressure is applied under heat so that thesubmount and the tops of the laser mesas are bonded electrically withsolder. When bonding an array of back emitting devices a typical failuremechanism at bonding is a cracked mesa which renders the laser uselessand can cause a rejection of the entire device. If there are 30 laserson the chip and after bonding 2 are broken, those 2 devices will notlight up. The testing still must be done causing an expensive process toremove failures.

Another problem is that the multi-mesa structure yields relatively lowlasing power as a function of chip real estate because of spacingrequirements for the multiple mesas that are present on the laser chip.

Another problem with the multiple mesa arrays produced by mesa isolationis that the lasers are separated by a distance which limits the overallsize of the array due to frequency response-dependent design parametersthat prefer shorter distance for a signal to travel across a contactpad. Later, arrays were used with elements which add in power such asthe multi Vertical Cavity Surface Emitting Laser (VCSEL) arrays whichwere used for infrared (IR) illumination. However these IR sources didnot support high frequency operation, so their pulse width was limitedto illumination instead of LIDAR, which needs fast pulse widths.

In an effort to satisfy needs in the art for stronger and more powerfulhigh speed laser arrays, the inventor discloses a number of inventiveembodiments herein. For example, embodiments of the invention describedbelow incorporate a high frequency electrical waveguide to connectlasers of the array together while reducing capacitance by forming thesignal pad on the substrate which employs the electrical waveguide.Embodiments of the invention also comprise the use of multi-conductivecurrent confinement techniques in a single structure to produce multipleareas that are conducting compared to non-conducting part of thestructures. The conducting parts form lasing areas or grids of lasingforming lasers without etching around the entire structure of the lasingpoint. Unlike the design described in the above-referenced U.S. Pat. No.5,978,408, embodiments of the invention disclosed herein are designedand processed so that the laser array is integrated with a high speedelectrical waveguide to enable high frequency operation. Embodiments ofthe present invention support new and unique opportunities in the designof a high power high speed light sources by exhibiting both highfrequency operation and a rigid structure, thus enhancing performanceand reliability over other designs known in the art.

In an example embodiment disclosed herein, a unique structure processedfrom a Vertical Cavity Surface Emitting Laser (VCSEL) epitaxial materialforms a grid of laser points from a single rigid structure which isconducive to high speed operation by reducing capacitance, increasingstructural integrity, and decreasing the fill factor as compared to thetypical mesa structures formed in VCSEL arrays such as those mentionedin US Pat App. Pub. 2011/0176567. It should be understood that the VCSELembodiment is only an example, and such a design can work with otherlaser types, such as Resonant Cavity Light Emitting Diodes (RCLEDs),LEDs, or Vertical Extended (or External) Cavity Surface Emitting Lasers(VECSELs).

The single contiguous structure described herein forms areas ofelectrical isolation of apertures using implanting of ions or areas ofnonconductive oxidation through microstructures or holes while keepingthe structural integrity of the material that is typically etched away.The formation of the new structure also allows a high speed signal to bedistributed between the different isolated laser conduction points orgrid. All of the P-contact areas of the laser grid can be connected inparallel to the signal portion of a ground-signal-ground (GSG)integrated electrical waveguide. The signal or current being switched onand off in the waveguide is distributed between all of the conductivepaths which form lasers. It should be understood that other types ofelectrical waveguides could be used such as a micro-strip waveguide.

The single contiguous structure has other benefits such as a larger basefor heat distribution within a larger plating structure. The lasing gridis closer together than the array structures to each other. The fartherthe lasers are apart the slower the frequency response or the speedwhich limits the ultimate bandwidth of the device due to the distancethe signal must travel to every single point in an array.

Accordingly, examples of advantages that arise from embodiments of theinvention include:

1. Rigid structure has a higher reliability in the chip bonding process2. Rigid structure has a higher fill factor possibility3. Rigid structure has higher reliability metal contacts4. Rigid structure is simpler to process5. Rigid structure has shorter distance between contacts enabling higherfrequency high power beams6. Rigid structure is a better surface topology for a single lens orlens array to be attached7. Rigid mesa structure produces another area for leads and contactswhich offer separation from potentials lowering capacitance.8. Rigid structures allow higher integration with sub mounts because ofthe 3D nature of the contacts.

Furthermore, with an example embodiment, a laser grid is formed by morethan one lasing area enabled by confining the current to isolatedregions in the structure where conductivity exists as compared to thenonconductive ion implanted areas. The conductive and nonconductiveareas form a grid of light which has a single metal contact on thesingle solid structure for the active Positive contact and a single NContact on the surrounding ground structure which is shorted to the Ncontact area at the bottom of the trench isolating the two areas. By wayof example, FIG. 7C shows how an opening in the frame would helpincrease the speed.

These P and N contacts are then bonded to a high speed electricalcontact The 2 substrate and laser chips are aligned by a bonder thenheat and pressure are applied to bond the solder that has been depositedon one chip or the other. The high speed is enabled because the p pad isseparated from the n wafer ground by plating and solder heights butmostly by removing it off the laser substrate and placing it on anelectrical waveguide substrate. The physical separations dramaticallyreduces capacitance increasing the frequency response which is limitedby the capacitance of the circuit. This enables the lasing grid toachieve high frequency operation.

A single lens formed on the back of the substrate or a single Lensattached or bonded to the back of the grid structure could direct eachlasing point from a convergence point or to a convergence point. This isideal in collimating the beam output as if it were from a single source.

These and other features and advantages of the present invention will bedescribed hereinafter to those having ordinary skill in the art.

Embodiment 1 for US Pat App Pub 2017/0033535—Top-Emitting Implant

FIG. 1 shows an example of a first embodiment of the invention. In thisexample, a single solid structure is isolated from a surrounding groundwith an etch, and where the single solid structure has within it ionimplants. The ion implants create areas of the semiconductor materialthat are non-conductive, and these areas of non-conductivity forcecurrent flow through the lasing areas 2. Thus, the ion implants form alaser grid of multiple lasing areas 2 where current is confined toisolated regions in the structure where conductivity exists as comparedto the nonconductive ion-implanted areas. The conductive andnonconductive areas form a grid of light which has a single metalcontact on the single solid structure for the active positive (P)contact and a single negative (N) contact on the surrounding groundstructure which is shorted to the N contact area at the bottom of thetrench isolating the two areas or to negative metal on the surroundingground structure which is shorted to the N contact area at the bottom ofthe trench isolating the two areas (as in, for example, FIG. 7C (seereference numbers 781 and 782). These P and N contacts are then bondedto a high speed electrical contact, thereby enabling the lasing grid toachieve high frequency operation.

While FIG. 1 shows the lasing areas 2 arranged in a grid pattern, itshould be understood that many shapes and patterns of lasing areas 2could be formed. This allows many forms of structures withshapes/patterns of lasing areas 2 such as a honeycomb structure pattern(see, for example, FIG. 23 which illustrates another pattern which isone of many allowing different laser shapes or patterns; there are manypatterns that can be used for etching or implanting to leave conductiveareas 41 for lasers in a single mesa structure versus non-conductiveareas 42) and other structure patterns which are more rigid whileimproving bonding. Heat removal can still be accomplished by depositingmaterials with high thermal conductivity materials in the holes that areetched into the single mesa structure to produce the multiple lasers(see, e.g., holes 7005 in FIG. 7) which are closer to the junctions.Examples of additional structure patterns can include arrangements likesquares or circles on lines, etc.

FIG. 1 shows a top view of the epitaxial side of a laser chip. A singlelaser-emitting epitaxial structure 1 has an ion-implanted area, allexcept the lasing areas 2 (which are shown as disks in FIG. 1) where theion implant was masked. FIG. 1 thus represents the chip after implant,and etch. Relative to the prior design of US Pat App Pub 2011/0176567which has multiple epitaxial mesas with each mesa corresponding to asingle lasing region, the design of FIG. 1 shows a single contiguousstructure 1 that does not have multiple mesas and can instead becharacterized as a single mesa, where this single mesa includes multiplelasing regions 2. The illustration of FIG. 1 is meant to show the singlemesa structure and not the electrical contacts. This structure 1 couldbe either bottom emitting or top emitting depending on the design andreflectance on the N mirror as compared to the P mirror.

FIG. 1 shows:

-   -   1 Single Active Mesa Structure which will produce multiple        lasing points    -   2 Areas where implant is masked so that implant does not affect        epitaxial region under mask.    -   3 Etched isolation trench separating the Single Active Mesa        Structure and the Single Ground Structure    -   4 Single Ground Structure

FIG. 2 is a cutaway view of the laser chip shown by FIG. 1, where thesingle active mesa structure 1 shown by FIG. 1 is numbered as 11 in FIG.2 and where the masked implant areas 2 shown by FIG. 1 are numbered as12 in FIG. 2. FIG. 2 represents the chip after implant, and etch but notop metal. Etched region 13 isolates the single mesa structure 12 fromthe “frame” or N mesa 14 (where the single ground structure 4 from FIG.1 is shown as the frame/N mesa 14 in FIG. 2). FIG. 2 shows:

-   -   11 Implanted area of Single Active Mesa Structure isolating        multiple lasing points    -   12 Areas of the Epitaxy Masked from Implant which will produce        lasing    -   13 Etched isolation trench separating the Single Active Mesa        Structure 11 and the Single Ground Structure 14    -   14 Single Ground Structure    -   15 Quantum wells between the top P mirror and the bottom N        mirror—this is an active region where Photons are emitted    -   16 N mirror which has N contact layer or highly doped layers for        N metal electrical contact location    -   17 Laser substrate

FIG. 3 is a perspective view of the chip shown by FIGS. 1 and 2. Theimplanted region is invisible. The metal contacts are not shown. Thisillustration is to show the topology of the single mesa etch, which canbe used for either top-emitting or bottom-emitting implanted devices.The process of implant can take place before or after top metal or etch.

FIG. 4 shows a top view of the epitaxial side of an example top emittingVCSEL grid structure. The view is through a square hole in the topelectrical waveguide which is bonded by a solder process to the laserchip. The isolation etched region is hidden in this view by theelectrical waveguide. The round disks on this illustration are the holesin the top metal contact or plated metal contact region over the singlesolid mesa structure. FIG. 4 shows:

-   -   41 Hole in substrate with waveguide underneath    -   42 Holes in the top P metal so laser beams can emit through    -   43 Top of waveguide substrate    -   44 Top spreading metal on laser chip

FIG. 5 illustrates a cutaway view of the bonded electrical waveguide andlaser chip shown by FIG. 4. The signal contact for the electricalwaveguide is opened to allow the beams to propagate through the opening.Another option of this embodiment would be to have a transparent ortransmitting substrate material for the waveguide instead of a hole forthe lasers to propagate through. A transparent material such as CVD(Chemical Vapor Deposited) diamond or sapphire or glass could be anexample of that material. This figure shows the embodiment with asubstrate such as AlNi which is opaque and thus needs a hole or opening.Notice the isolation region is separating the single mesa structure fromthe single mesa ground or structure or “frame” structure which isshorted to ground.

These P and N contacts are bonded to a high speed electrical contact(see also FIG. 7B, reference numbers 751 through 754). Theground-signal-ground (GSG) electrical waveguide substrate and laserchips are aligned (see FIG. 14B) so that the negative mesa is bonded tothe negative part of the waveguide and the positive active areas whichlase are aligned to the signal pad. This alignment is defined by abonder, then heat and pressure are applied to bond the solder that hasbeen deposited on one chip or the other (see FIG. 15) The high speednature of this contact arises because the p pad is separated from the nwafer ground by plating and solder heights but mostly by removing it offthe laser substrate and placing it on an electrical waveguide substrate.The physical separations dramatically reduce capacitance, therebyincreasing the frequency response (where the frequency response islimited by the capacitance of the circuit) and yielding high frequencyoperation for the lasing grid.

In an example embodiment, for high speed operation, the surface connectsto the electrical contact at the bottom of epi design, which isaccomplished through the isolation trench (see, for example, FIG. 7Areference number 702) surrounding the single structure (see, forexample, FIG. 7A (reference number 717)). This structure is not based onmesa topology but is simply shorted to the electrical region of the Ncontact metal (see FIG. 7A (reference number 703)) through the metalplating (such as in FIG. 7C reference number 782). This is not a builtup structure or raised structure as described in US Pat App. Pub.2011/0176567 but rather uses the chip surface and the epi material to bea surface for bonding, which also makes the device much more stable androbust at bonding.

Returning to FIG. 5, the GSG Signal Pad 51 has Solder 52 electricalconnecting the P Contact Metal on the top of the Active Single MesaStructure. This allows the signal or current to be injected into themetal contact structure with holes in it for laser propagation and thenthe current flows through the non-implanted regions of the epitaxialstructures forcing current to be confined to just those defined regions.The top P mirror region has a slightly lower reflectance than the bottomN mirror allowing the light to emit from the top of the epitaxialstructure. The current flows on through the quantum wells which producethe light and heat in there junction, and into the n mirror where itproceeds to the N contact region in or near the n mirror. The currentwould then proceed up the shorted frame structure which is bonded and inelectrical contact to the ground portion of the GSG electricalwaveguide. This structure which utilizes top emitting design can be usedfor lower wavelength output designs which are lower than thetransmission cutoff of the GaAs or laser substrate material. Backemitting structures can typically only be designed for wavelengths above˜905 nm. This top emitting structure could be used with ˜850 nm or lowerto the limits of the epitaxial material set.

A single solid structure isolated from a surrounding ground with an etchwhere the single solid structure has within it ion implants; theimplants are invisible but cause the semiconductor material to benonconductive because of the crystal damage it causes. In order to makean implanted device you must mask the areas that are to be protectedfrom the damage first.

Small mesas are formed with photoresist positioned by aphotolithographic process which protects the epitaxial material fromdamage then is washed off after the implant takes place. The implanthappens in an ion implant machine which accelerates ions down a tube andyou put the wafer in front of the stream of ions.

Implanted ions can create areas of the semiconductor material that arenon-conductive. These areas of non-conductive material will force thecurrent flow through the lase areas. These non-conductive areas can alsobe created by etching a pattern similar to FIG. 1 and oxidizing thesingle structure as described below in connection with Embodiment 2.FIG. 5 shows:

-   -   50 Non Conducting Electrical Waveguide Substrate    -   51 Signal metal of electrical waveguide    -   52 Solder metal for bonding electrical waveguide to laser chip    -   53 Plated Metal shorted to P Contact Layer and electrically        connected to Signal pad of GSG electrical waveguide    -   54 P Output Mirror-Diffractive Bragg Reflector    -   55 Active Region-Quantum Wells    -   56 N Mirror where low resistance contact Layer is located    -   57 Plated Metal shorting or in electrical contact with N Contact        layer and to Ground Mesas    -   58 Solder in Electrical contact with Ground pad of electrical        high speed waveguide and in electrical contact with Grounded        Mesa structure    -   59 Area on Plated metal connected to P Metal on single mesa        structure for contacting signal pad on high speed electrical        waveguide

FIG. 24 shows a comparative view of different current flows as betweenan embodiment such as Embodiment 1 and the design taught by US Pat App.Pub. 2011/0176567. With US Pat App. Pub. 2011/0176567, each mesa issurrounded by an N metal contact area. This takes precious space or realestate on the chip as the processing to define those footstep metal ncontacts around each mesa require photolithography which limits howclosely you can space the mesas together. These limits lead to a lowerpower output per unit area than the new method. Therefore the goal ofthis old apparatus was an array for highest power and speed yet did nottake into account the vast improvement in power/area which would also bean improvement in the ultimate goal of highest Power with the highestSpeed. Also, this old method's N contact had to be large because of thestructural limitations from the old method has been removed with the newsingle structure.

With the new design described herein, a single structure has severallasers on it and only one contact around that single structure. The newstructure reduces that N metal area to the outside of the structuremaking the area per light element much smaller. This involves a large Ncontact layer calculated to carry the current load of the singlestructure. The higher current flow from the single contact can berealized through thicker metal and or thicker N contact region.

Embodiment 2 for US Pat App Pub 2017/0033535—Bottom-Emitting Implant

FIG. 6 illustrates a cutaway view of an example of a second embodiment,where the second embodiment is a bottom-emitting device with implantedregions for current confinement. The GSG electrical waveguide can beseen solder bonded to the frame-ground structure and the active singlelaser mesa structure. FIG. 6 shows:

-   -   601 Electrical Waveguide Substrate    -   602 Ground Contact and Signal Contact in that order of GSG        Electrical Waveguide    -   603 Solder-Bonding GSG Waveguide to Laser Chip    -   604 Plating Metal electrically connecting Signal pad of        Electrical Waveguide to Lasers P contact    -   605 P contact Metal    -   606 Implanted Region that has been rendered non conductive    -   607 P mirror    -   608 Active region (quantum wells)    -   609 N Mirror    -   610 Conducting Layers in N Mirror where Implant has not reached    -   611 Laser Beams Propagating through Laser Substrate    -   612 Plating Metal shorted to N contact region    -   613 Frame Area Shorted to N Contact region    -   614 Solder electrically contacting N contact on Laser to Ground        on Electrical Waveguide    -   615 Etched region isolating large single mesa from Ground Frame

Process for Embodiments 1 and 2 of US Pat App Pub 2017/0033535

An example embodiment of the process steps to create the singlestructure for embodiments 1 and 2 with implant current confinement canbe as follows.

-   -   Step 1. Use photolithography to mask areas which will not have P        Metal deposited.    -   Step 2. Deposit P Metal (typically TiPtAu ˜2000 A)    -   Step 3. Photolithography lift off and wafer cleaning. O2 descum        or ash all organics off wafer.    -   Step 4. Dielectric deposit (typically SiNx ˜<1000 A) used as an        etch mask    -   Step 5. Photolithographic masking using either photoresist or        metal deposited in areas to protect the epi material from being        damaged from the implant which makes the unprotected regions        non-conductive through ion bombardment. This step can be        performed later in the process but may be more difficult due to        more varied topology.    -   Step 6. Implant—Those skilled in the art of calculating the        implant doses will determine the dose and species of implant        needed to disrupt the materials structures to the depth which        will isolate the p regions and the quantum wells from each        other—    -   Step 7 Cleaning this photolithography is difficult due to the        implant and a deposition of metal over the photolithography such        as plating could help to make it easier to clean off the resist.    -   Step 8. Use photolithography to mask areas of dielectric which        will not be etched. This is the unique part which is the design        of the mask which creates a large isolated structure down        implants within that structure define where current cannot flow.    -   Step 9. Use plasma etch to etch through dielectric (typically Fl        based etchant) can use wet etch such as BOE (buffered oxide        etch).    -   Step 10. Etch pattern into Laser or Light Emitting Diode        Epitaxial material. Stop on Substrate or doped electrical        contact layer. This isolates a single large structure from the N        shorted regions around the chip    -   Step 11. Clean off mask. O2 descum or ash all organics off        wafer.    -   Step 12. Use photolithography to mask areas which will not have        N Metal deposited.    -   Step 13. Deposit N Metal (Typically GeAu/Ni/Au eutectic        composition of 80% Au/20% Ge by atomic weight. Total thickness        of AuGe layer ˜3000 A or more with ˜200 A Ni or more of other        diffusion barrier metal and ˜5000 A of Au or more This is also        unique hear where the n metal is deposited in the n contact        etched region and also up and over the N contact structure        shorting the structure to the n-contact.    -   Step 14. Clean off mask (typically called lift off). O2 descum        or ash all organics off wafer.    -   Step 15. Dielectric deposit (typically SiNx ˜2000 A) used as a        non-conductive isolation barrier    -   Step 16. Use photolithography to mask areas of dielectric which        will not be etched.    -   Step 17. Use plasma etch to etch through dielectric (typically        F1 based etchant) can use wet etch such as BOE (buffered oxide        etch).    -   Step 18. Clean off mask. O2 descum or ash all organics off        wafer.    -   Step 19. Use photolithography to mask areas which will not have        Plated Metal deposited.    -   Step 20. Plate areas with ˜4-5 um of Metal (typically Au) or Cu        if diffusion barrier can be deposited first.    -   Step 21. Use photolithography to mask areas which will not have        Solder deposited.    -   Step 22. Deposit Solder Metal (Typically AuSn/Au eutectic        composition of 80% Au/20% Sn by atomic weight. Total thickness        of AuSn layer ˜40000 A (4 microns) or more with ˜500 A Au on top        to stop any oxidation of Sn. This layer can be patterned and        deposited on the submount with electrical waveguide which is        bonded to the laser grid.

Embodiment 3 for US Pat App Pub 2017/0033535—Top-Emitting Oxidation

In a third embodiment, oxidation rather than ion implantation is used tocreate the grid of top-emitting lasing regions within the singlestructure. For example, a patterned etch can isolate conductive paths ina single structure, creating a grid of light sources. This structureexhibits multiple laser emission points from the single structure. Thelasing structure is isolated with an etched region from the groundcontact that forms the outside perimeter of the chip. This structure forEmbodiment 3 is top emitting. The conductive areas of the grid are wherelight will be emitted. The positive electrical contact can be a gridwith openings where the light is emitted.

The epitaxial material of the laser wafer can be a VCSEL design, andmost VCSELs are top emitting. The distribution of the signal using a ptype waveguide pad is typically on the laser wafer, but it should beunderstood that in an oxidated single structure embodiment that has aback emitting design, the waveguide can be on a separate substrate thatis separated from the laser n material or layer.

FIG. 7, which shows an example of Embodiment 3, illustrates an examplepattern etched into a wafer to create a single structure which allowsmultiple point lasing. The single structure of an embodiment such asthat shown by FIG. 7 is much more rigid than the thin columns made offragile crystal material as taught by US Pat App. Pub. 2011/0176567.Also, as explained with respect to an embodiment discussed above, itshould be understood that pattern of lasing areas other than that shownby FIG. 7 may be employed if desired by a practitioner.

In FIG. 7, the diagonally striped areas are preferably etched down tocreate the patterned single mesa structure in the middle of theisolation trench. All diagonally striped areas are preferably etcheddown to the bottom N electrically conductive layer 705 in FIG. 7A ortypically the larger isolation trench will be etched to the electricalcontact buried in the epitaxial design, while the smaller patterned etchareas must go deeper than the active region which isolates the lasingpoints. The patterned structure in the middle of the isolation trench isa single structure with “shaped” holes etched into it.

The holes in the large single mesa are large in this case. These holesallow the oxidation process environment to oxidize the layers in theepitaxial region. The oxide layer or layers has high aluminum contentand forms AlO₂ that grows laterally through the layer until taken out ofthe oxidation process. White areas are the surface of the chip, dottedlines are where oxidation limits current flow to unoxidized areas only.The holes in the large single mesa are large in this case. These holesallow the oxidation process environment to oxidize the layers in theepitaxial region. The oxidation layer can be formed by using a high Alcontent layer in the epi design structure which is buried below thesurface. The etched areas expose that layer which is then placed in anoxidation chamber allowing the exposed layer to oxidize inward, whereAlO₂ grows laterally through the layer until taken out of the oxidationprocess. As the length of the oxidation grows in that thin layer, itisolates or closes off the current paths with a dielectric material ofAlO₂ that is formed during the oxidation process. If the areas 7005 areetched, then the oxidation will continue to grow until only areas 7008are conductive and the area or part of the epitaxial layers whichconduct the current through that section. Electrically conductive areasallow current flow through the quantum wells (see FIG. 7A referencenumber 707) and produce lasing as the light is trapped in the cavitybetween the p mirror 709 and N mirror 706.

The oxidation length can be seen in FIG. 7 as dotted lines, all aboutthe same distance from any one exposed edge or holes in the large singlestructure that has holes formed in it. FIG. 7 also shows the largesingle mesa ground structure. Three views of cross sections areillustrated to identify where FIGS. 7A, 7B, and 7C are located. Note 7Bwhich clearly shows through this cross section that the mesa in thecenter is a single structure.

FIG. 7 shows:

-   -   7001 Frame (Single Shorted Mesa) for Electrical Contact to        Ground of Electrical Waveguide    -   7002 Etched region isolating large single mesa from Ground Frame    -   7003 Single Mesa Structure with Etched Holes    -   7004 Indents in Edges to keep edges of Single Mesa Structure        Oxidized and Non Conductive    -   7005 Etched Hole in Single Mesa Structure    -   7006 Oxidation Pattern around any Etched Edges    -   7007 Overlapped Oxidized Areas not allowing Current Flow    -   7008 Laser Aperture where Current Flows freely (same as 761 in        FIG. 7B)    -   7009 Gap in Shorted Mesa Structure to Reduce Capacitance from        Ground to Signal Pad on Electrical Waveguide

FIGS. 7A, 7A2 and 7B are side views of the example FIG. 7 embodiment.

FIG. 7A2 shows the etched holes 727 that allow the oxidation 731 toform, which confines the current into region 761 of FIG. 7B, forformation of laser beams 763.

Reference number 706 in FIG. 7A is a p mirror diffractive Braggreflector (DBR) which has one or more layers in it with very highaluminum content 708 which when exposed to hot damp conditions oxidizes708 confining the current to the areas 761 shown by FIG. 7B, which arewhere the laser beams come out. The N mirror DBR 709 has a conductivelayer 705 to take the current flow out through the N metal ohmic contact703 to the plating 782 (see FIG. 7C) which goes up and over the singleground mesa structure 718 (see FIG. 7A) to the solder 717 andelectrically connecting to the N plating on the GSG waveguide 716 andinto the N contact 715 of the waveguide.

Current confinement is a major part of a semiconductor laser. Theconcept is to force the current flow away from the edges of thestructure so there is not an issue with current flowing near roughsurface states that may exist from the etch. The current flow is alsoideally concentrated to create lasing by increasing the current densityin the material The current confinement occurs either by oxidationthrough allowing the high concentrate layers of Al to get exposed by hotdamp conditions in the oxidation process enabled by the drilled holes(e.g., this Embodiment 3), or by the implant to render all other areasnonconductive (e.g., see Embodiments 1 and 2).

FIG. 7A shows:

-   -   701 Electrical Waveguide Substrate    -   702 Etched region isolating large single mesa from Ground Frame    -   703 N Metal contact electrically contacting N contact layer    -   704 N Mirror    -   705 N Contact layer in N mirror (low resistance for ohmic        contact)    -   706 N Mirror above N contact region    -   707 Active region (quantum wells)    -   708 Oxidized Layer Closing off Current in these Regions    -   709 P mirror    -   710 Dielectric Layer    -   711 Plating on top of P contact Metal    -   712 Aperture in P Contact Metal and Plating Metal for laser beam        exit    -   713 Electrical Waveguide Substrate    -   714 Ground Contact of GSG Electrical Waveguide    -   715 Signal Contact of GSG Electrical Waveguide    -   716 Solder-Bonding GSG Waveguide to Laser Chip    -   717 Solder-Bonding GSG Waveguide to Laser Chip    -   718 Frame structure electrically connected to N contact region        of laser chip

FIG. 7A2 is a continuation of FIG. 7A above, and it further shows:

-   -   721 Ground Contact of GSG Electrical Waveguide    -   722 Plating on Ground Contact of GSG Electrical Waveguide    -   723 Solder-Bonding GSG Waveguide to Laser Chip    -   724 Signal Contact of GSG Electrical Waveguide    -   725 Solder-Bonding GSG Waveguide to Laser Chip    -   726 Plating on Signal Contact of GSG Electrical Waveguide    -   727 Etched Hole Regions in Single Mesa Substrate permits        oxidation to form Current Confinement Apertures    -   728 Plating on top of P contact Metal    -   729 Opening in Dielectric layer for electrical contact from        Plating to P Contact Layer on Laser Single Mesa Structure    -   730 Dielectric Layer    -   731 Oxidation Layer closing off current near Etched Hole Regions

FIG. 7B is a FIG. 7 cutaway view that also shows the electricalconnections and electrical waveguide that are not shown in FIG. 7. FIG.7B illustrates the cross section through the apertures created by theoxidized layer. The oxidized layer is exposed to the oxidation processthrough the holes in the single structure illustrated in FIG. 7A. Thisview also shows that the Active Mesa Structure is truly a Single MesaStructure. FIG. 7B depicts:

-   -   751 Ground Contact of GSG Electrical Waveguide    -   752 Plating on Ground Contact of GSG Electrical Waveguide    -   753 Solder-Bonding Ground of GSG Waveguide to Laser Chip    -   754 Signal Contact of GSG Electrical Waveguide    -   755 Plating on Signal Contact of GSG Electrical Waveguide    -   756 P contact Metal on Laser Chip    -   757 Opening in plating and P Contact Metal over Laser Aperture    -   758 Plating on P Contact Metal    -   759 Solder-Bonding Signal of GSG Waveguide to Laser Chip    -   760 Dielectric Layer Protecting Active Mesa Structure from N        Contact    -   761 Current Confinement Aperture formed by opening in Oxidation        Layer    -   762 Oxidation Layer Dielectric    -   763 Laser Beam Propagating through Metal Opening

FIG. 7C is a cross sectional view of the area where the P Contact orSignal of the GSG waveguide is positioned below the Laser Chip where theN Contact Frame or single structure mesa grounded to the N contact ofthe laser is above the GSG Electrical Waveguide. The large gap betweenthe Laser Ground and the P Signal Pad reduces the capacitance of thecircuit enabling higher frequency operation. FIG. 7C depicts:

-   -   780 Dielectric Layer    -   781 N Type Ohmic Contact Metal    -   782 Plating Shorting N Metal Contact to Single Ground Mesa        Structure    -   784 N Contact Layer in Epitaxial Growth    -   785 Plating Electrically Contacted to Signal Pad on Electrical        Waveguide    -   786 Metal Signal Pad Lead on GSG Electrical Waveguide    -   787 Plating on Ground Pad of GSG Electrical Waveguide    -   788 Electrical Waveguide Substrate    -   789 Gap between Conductive Signal Pad Structure and N Contact        Layer Reduces Capacitance

Process for Embodiment 3 of US Pat App Pub 2017/0033535

An example embodiment of the process steps to create the singlestructure for embodiment 3 with oxidation current confinement can be asfollows.

-   -   Step 1. Use photolithography to mask areas which will not have P        Metal deposited.    -   Step 2. Deposit P Metal (typically TiPtAu ˜2000 A)    -   Step 3. Photolithography lifts off and wafer cleaning. O2 descum        or ash all organics off wafer.    -   Step 4. Dielectric deposit (typically SiNx ˜<1000 A) used as an        etch mask    -   Step 5. Use photolithography to mask areas of dielectric which        will not be etched.    -   Step 6. Use plasma etch to etch through dielectric (typically Fl        based etchant) can use wet etch such as BOE (buffered oxide        etch).    -   Step 7. Etch pattern into Laser or Light Emitting Diode        Epitaxial material. Stop on Substrate or doped electrical        contact layer. Typically the etch is Cl based with some (high        percentage) amount of BCl3.    -   Step 8. Clean off mask. O2 descum or ash all organics off wafer.    -   Step 9. Use photolithography to mask areas which will not have N        Metal deposited.    -   Step 10. Deposit N Metal (Typically GeAu/Ni/Au eutectic        composition of 80% Au/20% Ge by atomic weight. Total thickness        of AuGe layer ˜3000 A or more with ˜200 A Ni or more of other        diffusion barrier metal and ˜5000 A of Au or more    -   Step 11. Clean off mask (typically called lift off). O2 descum        or ash all organics off wafer.    -   Step 12. Dielectric deposit (typically SiNx ˜2000 A) used as a        non-conductive isolation barrier    -   Step 13. Use photolithography to mask areas of dielectric which        will not be etched.    -   Step 14. Use plasma etch to etch through dielectric (typically        Fl based etchant) can use wet etch such as BOE (buffered oxide        etch).    -   Step 15. Clean off mask. O2 descum or ash all organics off        wafer.    -   Step 16. Use photolithography to mask areas which will not have        Plated Metal deposited.    -   Step 17. Plate areas with ˜4-5 um of Metal (typically Au) or Cu        if diffusion barrier can be deposited first.    -   Step 18. Use photolithography to mask areas which will not have        Solder deposited.    -   Step 19. Deposit Solder Metal (Typically AuSn/Au eutectic        composition of 80% Au/20% Sn by atomic weight. Total thickness        of AuSn layer ˜40,000 A (4 microns) or more with ˜500 A Au on        top to stop any oxidation of Sn. This layer can be patterned and        deposited on the submount with electrical waveguide which is        bonded to the laser grid.    -   Step 20. Separate laser chips from wafer with cleaving or        dicing.    -   Step 21. Design and Fabricate electrical waveguide to align to        laser chip with the design to allow high frequency operation.    -   Step 22. Align and Flip Chip Bond the laser chip to the Submount        electrical waveguide

Embodiment 4 for US Pat App Pub 2017/0033535—Bottom-Emitting Oxidation

In a fourth embodiment, an oxidated single structure with multiplelasing regions is designed as a bottom-emitter rather than a topemitter. FIG. 8 through FIG. 14C provide details about Embodiment 4 andillustrate the process which can be used to make this embodiment. Thelasing grid's light is emitted through the substrate forming a backemitter.

Light is transmissive in GaAs from wavelengths around 900 nm andgreater. If the wavelength of the light engineered in the epitaxialdesign is in the range ˜900 nm and above, the GaAs substrate transmitsthe light or is transparent to the light. If the epitaxial designincludes an N mirror that is less reflective than the P mirror, a lasersuch as a VCSEL can emit the light from the N mirror through thesubstrate. The laser beams will propagate through the material, and thesubstrate can be a platform for optical components to collimate, spread,diverge, converge or direct the light. This enables integrated opticalcircuits with extremely high bright power to be formed. The singlestructure and the ground contact can then be integrated to a high speedelectrical waveguide substrate enabling high frequency responses fromthe entire grid. A ground signal ground electrical waveguide is idealfor this high speed electrical waveguide. Another type of electricalwaveguide that may be used is a microstrip waveguide (see FIG. 15),where the signal pad is separated from the ground pad by a thindielectric layer on a substrate.

FIG. 8 is an illustration of a typical epitaxial design. Any high speeddesign can be used for VCSEL devices. FIG. 8 shows:

-   -   81 GaAs substrate    -   82 Possible position for low resistance contact layer    -   83 N Mirror layer after contact region    -   84 Low resistance N contact region    -   85 N Mirror layer after quantum wells    -   86 Quantum Well Region    -   87 Oxidation layers    -   88 P Mirror    -   89 Low resistance P Contact layer

FIG. 9 is an illustration of the first process performed, which is Pmetal deposit. This is typically a Ti/Pt/Au Layer on top of the highly Pdoped Contact Layer forming an ohmic contact. FIG. 9 shows:

-   -   91 P Metal forming Ohmic Contact after annealing process    -   92 Low Resistance P Contact Layer

FIG. 10 is a top view of the etch of the epitaxial layer down to the Ncontact layer. FIG. 10 shows:

-   -   1001 Etched Area to N Contact Layer    -   1002 Single Mesa Ground Structure    -   1003 Single Mesa Active Structure    -   1004 Etch Hole to Allow Oxidation Process to form Apertures    -   1005 Area in between all holes where there will be no oxidation        which forms conductive current confinement

FIG. 10A is a cross section view A of FIG. 10 formed before oxidationprocess, and FIG. 10A2 is a cross section view A of FIG. 10 formed afteroxidation process. FIG. 10A2 shows:

-   -   120 Oxidation completely closes off conductive path near any        etched regions that were exposed during the oxidation process.

FIG. 10B is a cross sectional view B of FIG. 10 illustrating where thecurrent confinement apertures were formed in the areas shown. This viewrepresents a section of the single mesa where no holes are penetratingthe cross section, and clearly shows that the mesa structure is a SingleMesa Structure enabling a more robust structure preferred at the bondingprocess. FIG. 10B shows:

-   -   125 Current Confinement Aperture is conductive region of Single        Mesa Structure    -   126 Oxidized Layer forming as dielectric layer near where holes        where etched    -   127 P Metal Contact Layer

FIG. 11 illustrates the dielectric layer deposited and patterned withopened via “holes” for electrical contact to the epitaxial contactlayers and sealing the semiconductor for reliability purposes. FIG. 11shows:

-   -   1101 Dielectric Layer patterned with openings or “vias”    -   1102 Opening in Dielectric Layer to P Contact Metal    -   1103 Contact Layer on Single Mesa Ground Structure

FIG. 12 shows the N metal contact after it has been deposited. FIG. 12depicts:

-   -   1201 N Contact Metal is deposited over the N Contact via hole to        make an electrical connection to the N Contact Layer.

FIG. 13 illustrates the next step of plating metal which shorts the Ncontact region to the top of the single grounded frame region, whichwill be bonded and electrically conductive to the ground pad of the GSGwaveguide. The plating also adds height to the active region reducingcapacitance and it removes heat from the active region of the devices togive the devices better performance. The plating over the active singlestructure is isolated from the N mirror and N contact region by thedielectric layer. FIG. 13 shows:

-   -   1301 Dielectric Layer preventing the Plating covering the Active        Region and extending into the holes of the single mesa structure    -   1302 Plating Covering Single Grounded Mesa Structure Shorted to        N Contact Region through N Contact Metal    -   1303 Plating Covering Active Structure and extending into the        holes of the active region where cooling can occur through a        higher thermal conductance of the plating metal    -   1304 Plated Metal extending over single frame structure for        bonding and electrically connecting to ground of GSG electrical        waveguide.

FIG. 14a illustrates solder deposited on the laser chip. This serves asthe electrical conductive bonding adhesion layer between the laser chipand the high speed electrical waveguide. FIG. 14a shows:

-   -   1401 Solder deposit

FIG. 14b illustrates the alignment of the GSG electrical waveguidebefore bonding. FIG. 14b shows:

-   -   1403 Submount for GSG Electrical High Speed Waveguide    -   1404 Ground Pad for GSG Electrical High Speed Waveguide    -   1405 Signal Pad for GSG Electrical High Speed Waveguide    -   1406 Plating Metal Deposited on Conductive areas of GSG        Electrical High Speed Waveguide

FIG. 14C illustrates the bonded laser chip to the GSG electricalwaveguide. The gap in the single grounded mesa enables high speedoperation by reducing capacitance.

Embodiment 5 for US Pat App Pub 2017/0033535

In a fifth embodiment, a microstrip or strip line electrical waveguideis used rather than the GSG waveguide, as shown by FIG. 15. Thisembodiment can also have the gap mentioned in FIG. 14c above. Thiselectrical waveguide can also be formed by a ground layer below a thindielectric with a signal lead on the top of the dielectric forming astrip line or microstrip waveguide. Openings in the dielectric can beused to contact the ground portion of the lasing grid. The width of thelines and thickness of the dielectric can be controlled to produce aspecific impedance value for circuit matching characteristics. It shouldbe understood that this technique can also be used for otherembodiments, such as Embodiment 2 or any of the embodiments discussedbelow. The view in FIG. 15 shows a cross section across the activesingle mesa structure:

-   -   151 Waveguide substrate    -   152 Metal Ground Pad across the entire waveguide    -   153 Dielectric layer separating the Ground from the signal pads    -   154 Metal Signal Pad    -   155 Metal Plating on Signal pad    -   156 Solder electrically connecting the signal pad to the single        active mesa shown here with gaps or holes etched into it.    -   157 Metal Plating on the Ground Pad    -   158 Solder electrically connecting the ground pad to the single        grounded mesa

Embodiment 6 for US Pat App Pub 2017/0033535

FIG. 16 shows a sixth embodiment. In FIG. 16 the structure is unique inthat it leaves paths for a portion of the light of each lase point to bedirected to another laser next to it in order to keep the lasing inphase. In this example the laser 161 has some of its outer modestructure reflected 162 down to the laser aperture next to it 163 whichproduces light in phase with 162. The laser which is in phase is 164 andin turn reflects from an angled reflective surface 165 back to theaperture of the laser next to it 167 which is also in phase with 164 and161 and so on. An angular and or reflective area 164 just outside of thelens or output area can divert a small portion of the light which isoverflowing from the lens or output diameter to the lasing grid adjacentto it, enabling a coherent lasing grid. Some of the light from theneighboring lasing points is injected into the lasing point which setsup the lasing points in a phase relation with each other. This allows acoherent operation of all lasing points when the structure directs someof the light from each laser to its neighbor. The reflectance, distanceand angles are very precisely calculated by one skilled in the art ofoptical modeling. Coherent operation is a benefit which has eluded laserarray operation for many years. FIG. 16 shows:

-   -   161 Large aperture laser with wide divergence only emitting a        portion of the light    -   162 A portion of the light from laser 161 is reflected to        aperture 163    -   163 Aperture of laser where reflectance conforms to the phase of        the light from 162    -   164 Large aperture laser with wide divergence only emitting a        portion of the light    -   165 Angled reflective surface on the back of the laser chip just        outside the output aperture    -   166 the reflected beam in phase with laser grid 164    -   167 Large aperture laser with wide divergence only emitting a        portion of the light

Embodiment 7 for US Pat App Pub 2017/0033535

FIG. 17 shows a seventh embodiment. In FIG. 17, the back side of thelasing grid chip has etched patterns to redirect the laser light 172 toparticularly beneficial areas. This is accomplished by diffractiveoptical elements (DOE) 171, which have the surface etched in a way thatwhen light travels through that portion, the angle of the surface andredirects 175 beams or light depending on the angle of the surface ofthe DOE. This can be used to collimate or diverge, direct or homogenizethe light. FIG. 17 does not illustrate the electrical waveguide. Themode can be controlled by the aperture sizes and characteristics of thereflective surface 173 and 174. FIG. 17 shows:

-   -   171 Redirected Laser Grid Beam from beam 172    -   172 Laser Grid Beam emitted from apertures    -   173 Contact and back of mirror for back emitting laser grid    -   174 Contact and back of mirror for back emitting laser grid    -   175 Redirected beams from laser grid

Embodiment 8 for US Pat App Pub 2017/0033535

FIG. 18 shows an eighth embodiment. In FIG. 18, a patterned diffractivegrating 184 (this is the opposite angular pattern than FIG. 17's DOE) isplaced or etched over the emission points 181 on the backside of thelaser wafer in a back emitting VCSEL design which directs the lasingpoints outward 185 from the grid. From the lens it looks like all thelasers are coming from a single point 186 behind the chip to form avirtual point source where a macro lens 187 can be used to collimate thebeam from the virtual converged source behind the chip. FIG. 18 shows:

-   -   181 Contact and back of mirror for back emitting laser grid    -   182 Aperture creating laser characteristics    -   183 Laser Beam from laser grid    -   184 Surface of Diffractive Optical Element (DOE) angled for        specific total beam grid characteristics    -   185 Redirected beams from laser grid    -   186 Converged virtual light source from all beams as seen from        lens 187    -   187 macro lens with focal point on virtual convergence point 186

Embodiment 9 for US Pat App Pub 2017/0033535

FIG. 19 shows a ninth embodiment. FIG. 19 illustrates a cross section ofthe bonded etched and oxidized Embodiment 3, except it has microlenswhich have been processed on the back of the laser chip and positionedso that one is aligned to the other and one is slightly misaligned onpurpose in order to redirect the laser beam emitted from the single mesastructure. While embodiment 3 is referenced for this arrangement, itshould be understood that any of the above back emitting embodiments anda microlens array attached to the chip or positioned above the outputgrid can be used. The microlens array can have values related to thepitch of the light conducting grid points but with a slightly differentpitch lens 74 forcing the light emitted by the lasing points to bedirected to a single area where the beams come together or seem likethey come together in front of the chip or behind the chip as in avirtual point source. If the microlens pitch is smaller than the laserpitch, it will guide the outlying lasers to a point in front of the chipor directed inward. If the microlens arrays pitch is larger than thelasers' grids' pitch, the light will be directed outward as in FIG. 19.FIG. 19 shows:

-   -   71 Laser Substrate    -   72 N Mirror    -   73 N Contact Region    -   74 MicroLens slightly offset from laser directing laser light        outward    -   75 Active region or quantum wells    -   76 Oxidized layers creating current confinement into the active        area    -   77 Etched trench creating isolation from the single ground        structure and the active single mesa structure    -   78 P Metal Contact    -   79 Hole Etched into the single mesa structure to allow oxidation        to occur    -   80 solder electrically connecting the laser chip and the High        speed electrical waveguide    -   81 Signal pad of the GSG electrical waveguide    -   82 P mirror    -   83 GSG Waveguide substrate    -   84 Plating shorting the N metal located on the N contact layer        and the single ground mesa which is in electrical contact to the        Ground Pad of the GSG electrical waveguide    -   85 Ground Pad of the GSG electrical waveguide

Embodiment 10 for US Pat App Pub 2017/0033535

FIG. 20 shows a tenth embodiment. FIG. 20 illustrates that an extendedcavity laser design can be implemented using the single grid structureby reducing the reflectivity of the N epitaxial output mirror 230 to apoint where it will not lase, then adding the reflectivity to areflective surface 231 on the back of the lasing grid which extends thecavity. This structure reduces feedback of the higher mode structure 233in the cavity, thereby forming a more fundamental mode structure for theoutput beam 235 from the grid. FIG. 20 shows:

-   -   230 Arrow pointing to incomplete N output mirror epitaxial        region.    -   231 Reflective region made of dielectrically layers with varying        indexes of refraction.    -   232 Cavity of laser beam now includes laser wafer material        extending the cavity for modal rejection.    -   233 Reflected higher order modes which are not reflected back        into the cavity    -   234 Single or lower order modes in the cavity    -   235 single or lower order modes outputted from the Extended        Cavity Device

Embodiment 11 for US Pat App Pub 2017/0033535

FIG. 21 shows an eleventh embodiment. In FIG. 21, a VCSEL structure canbe adapted to the laser grid design like the above embodiment, and theback of the lasing chip where the output reflector (deposited on top oflens shape 241) of the lasing grid emits light can have convex 241 orconcave features under the reflector to form better a focused (focusarrows 243) feedback mechanism which rejects high modes and can bedesigned to have a single mode lasing output 245 from each grid area.The overall lasing structure will then have low M2 values. A lens ormicrolens can be added to collimate the output. FIG. 21 shows:

240 Arrow pointing to incomplete N output mirror epitaxial region.

-   -   241 Reflective region made of dielectrically layers with varying        indexes of refraction deposited on top of microlens structure        etched into the laser substrate or wafer    -   242 Single mode beam being reflected within the extended cavity    -   243 light from edges being directed back into the single mode        cavity from the optical element on the surface of the chip    -   244 single mode beam has more power and is more selective of the        single mode than FIG. 20's single mode beam    -   245 Output of high quality single mode beams    -   246 highly reflective epitaxial mirror

Embodiment 12 for US Pat App Pub 2017/0033535

FIG. 22 shows a twelfth embodiment. In FIG. 22, a VCSEL structure can beadapted to the laser grid design like the above embodiment except thatthe beams which exit straight out of the lens go through an externalmicrolens array which has been designed with different pitch microlensthan the laser pitches to allow redirection of the beams either to orfrom a single location like many of the above embodiments. Other formsof this technique could use a concave lens formed on the bottom of theexternal lens array which are aligned and have the same pitch as thelaser grid, while a convex laser array with a different pitch than thelaser grid is at the top. Another technique to direct beams would be touse DOEs as the top optical element instead of the convex microlenswhich are on the top of the external lens array. 252 is light reflectedback into the center of the aperture making a stronger single mode beamwhile 253 has the reflective coatings which complete the laser outputmirror cavity. 254 is the cavity and would have an antireflectivecoating deposited on the inside of the external lens cavity while alsodepositing an anti-reflective coating on the top microlens array.Another technique would be to use the flat reflective properties such asin FIG. 20 to complete the cavity mirror and have the microlens arrayoffset on the top or a DOE on top to redirect the beams. FIG. 22 shows:

-   -   250 Arrow pointing to incomplete N output mirror epitaxial        region.    -   251 Single mode beam being reflected within the extended cavity    -   252 light from edges being directed back into the center        creating strong single mode cavity from the optical element on        the surface of the chip    -   253 Reflective region made of dielectrically layers with varying        indexes of refraction deposited on top of microlens structure        etched into the laser substrate or wafer    -   254 Cavity for etched lens to not touch external lens array    -   255 External lens array transmissive material    -   256 Single Mode beam outputted by extended cavity laser    -   257 Microlens from lens array with different pitch than laser        pitch directing beams    -   258 Directed single mode beam

What is claimed is:
 1. An apparatus for optical data communications viaa line-of-sight communications link, the apparatus comprising: anoptical scope, wherein the optical scope comprises (1) a camera having acamera field of view, (2) a photodetector array having a photodetectorarray field of view, (3) optics that define a relationship between thecamera field of view and the photodetector array field of view, and (4)a processor; and a positioning system configured to controllably adjustan orientation of the optical scope to define where the optical scope isaimed based on a control signal; wherein the optics are configured toreceive a flash from a remote optical data transmitter; wherein thecamera is configured to generate a camera image of the flash; whereinthe processor is configured to (1) spatially localize the flash in thecamera image, (2) determine an adjustment needed for aligning a centralregion of the photodetector array field of view with the spatiallylocalized flash, and (3) define the control signal for the positioningsystem based on the determined adjustment.
 2. The apparatus of claim 1wherein the optics comprise a beam splitter that commonly bore sightsthe camera and the photodetector array so that the camera field of viewand the photodetector array field of view are commonly centered.
 3. Theapparatus of claim 1 wherein the camera and processor are configured torepeat their operations with respect to additional flashes from theremote optical data transmitter to iteratively align the optical scopewith the remote optical data transmitter.
 4. The apparatus of claim 1wherein the flash has a flash wavelength, and wherein the processor isfurther configured to filter the camera image to remove a plurality ofwavelengths of light from the camera image other than the flashwavelength.
 5. The apparatus of claim 1 wherein the flash has a flashwavelength, and wherein the optics include an optical filter in anoptical path between the optics and the camera, the optical filteradapted to remove a plurality of wavelengths of light in the opticalpath to the camera other than the flash wavelength.
 6. The apparatus ofclaim 1 wherein the positioning system is configured to controllablyadjust the orientation of the optical scope based on the control signalto align the optical scope with the remote optical data transmitter;wherein the optics of the aligned optical scope are configured to (1)receive a light beam from the remote optical data transmitter, whereinthe received light beam encodes data, and (2) direct the received lightbeam onto the photodetector array; and wherein the photodetector arrayis configured to convert the directed light beam into a signalrepresentative of the data.
 7. The apparatus of claim 6 wherein theremote optical data transmitter is also configured as an optical datareceiver to define a remote optical data transceiver, and wherein theoptical scope further comprises a light array emitter; wherein theprocessor is further configured to drive the light array emitter with aflash signal to cause the light emitter array to produce a flash signalthat gets directed to the remote optical data transceiver via the opticsto thereby permit the optical data receiver to align itself with thelight array emitter; wherein the processor is further configured todrive the light array emitter with a data signal to cause the lightarray emitter to produce a light beam that encodes the data signal,wherein the light beam that encodes the data signal gets directed to theoptical data receiver via the optics.
 8. The apparatus of claim 1wherein the optical scope further comprises a laser array emitter,wherein the laser array emitter comprises a laser-emitting epitaxialstructure, wherein the laser-emitting epitaxial structure comprises aplurality of laser-emitting regions within a single mesa structure.
 9. Asystem for optical data communications via a line-of-sightcommunications link, the system comprising: a first optical scope,wherein the first optical scope comprises (1) a first optical scopecamera having a first optical scope camera field of view, (2) a firstoptical scope photodetector array having a first optical scopephotodetector array field of view, (3) first optical scope optics thatdefine a relationship between the first optical scope camera field ofview and the first optical scope photodetector array field of view, and(4) a first optical scope processor; and a positioning system configuredto controllably adjust an orientation of the first optical scope todefine where the first optical scope is aimed based on a control signal;a second optical scope, wherein the second optical scope comprises asecond optical scope light emitter array; wherein the second opticalscope light emitter array is configured to produce a flash that isviewable within the first optical scope camera field of view; whereinthe first optical scope optics are configured to receive the flash fromthe second optical scope; wherein the first optical scope camera isconfigured to generate a camera image of the flash; wherein the firstoptical scope processor is configured to (1) spatially localize theflash in the camera image, (2) determine an adjustment needed foraligning a central region of the first optical scope photodetector fieldof view with the spatially localized flash, and (3) define the controlsignal for the positioning system based on the determined adjustment.10. The system of claim 9 wherein the first optical scope opticscomprise a beam splitter that commonly bore sights the first opticalscope camera and the first optical scope photodetector array so that thefirst optical scope camera field of view and the first optical scopephotodetector array field of view are commonly centered.
 11. The systemof claim 9 wherein the first optical scope camera and the first opticalscope processor are configured to repeat their operations with respectto additional flashes from the second optical scope to iteratively alignthe first optical scope with the second optical scope.
 12. The system ofclaim 9 wherein the flash has a flash wavelength, and wherein the firstoptical scope processor is further configured to filter the camera imageto remove a plurality of wavelengths of light from the camera imageother than the flash wavelength.
 13. The system of claim 9 wherein theflash has a flash wavelength, and wherein the first optical scope opticsinclude an optical filter in an optical path between the first opticalscope optics and the first optical scope camera, the optical filteradapted to remove a plurality of wavelengths of light in the opticalpath to the first optical scope camera other than the flash wavelength.14. The system of claim 9 wherein the positioning system is configuredto controllably adjust the orientation of the first optical scope basedon the control signal to align the first optical scope with the secondoptical scope; wherein the first optical scope optics are configured to(1) receive a light beam from the aligned second optical scope, whereinthe received light beam encodes data, and (2) direct the received lightbeam onto the first optical scope photodetector array; and wherein thefirst optical scope photodetector array is configured to convert thedirected light beam into a signal representative of the data.
 15. Thesystem of claim 14 further comprising: a second positioning systemconfigured to controllably adjust an orientation of the second opticalscope to define where the second optical scope is aimed based on asecond control signal; wherein the second optical scope furthercomprises (1) a second optical scope camera having a second opticalscope camera field of view, (2) a second optical scope photodetectorarray having a second optical scope photodetector array field of view,(3) second optical scope optics that define a relationship between thesecond optical scope camera field of view and the second optical scopephotodetector array field of view, and (4) a second optical scopeprocessor; and wherein the first optical scope further comprises a firstoptical scope light emitter array.
 16. The system of claim 15 whereinthe first optical scope light emitter array is configured to produce aflash that is viewable within the second optical scope camera field ofview; wherein the second optical scope optics are configured to receivethe flash from the first optical scope; wherein the second optical scopecamera is configured to generate a camera image of the flash from thefirst optical scope; wherein the second optical scope processor isconfigured to (1) spatially localize the received flash from the firstoptical scope, (2) determine an adjustment needed for aligning a centralregion of the second optical scope photodetector field of view with thespatially localized flash from the first optical scope, and (3) definethe second control signal based on the determined adjustment foraligning the central region of the second optical scope photodetectorfield of view with the spatially localized flash from the first opticalscope.
 17. The system of claim 9 wherein the second optical scope laserarray emitter comprises a plurality of laser subarrays that are arrangedto produce flashes that are offset from a main optical axis of theline-of-sight communication link; and wherein the second optical scopeis configured to sequence through flashing of the laser subarrays topermit the first optical scope to identify a laser subarray that isaligned with the first optical scope photodetector array.
 18. The systemof claim 9 wherein the second optical scope laser array emittercomprises a laser-emitting epitaxial structure, wherein thelaser-emitting epitaxial structure comprises a plurality oflaser-emitting regions within a single mesa structure.
 19. The system ofclaim 18 wherein the second optical scope laser array emitter furthercomprises: an electrical waveguide configured to provide a signal to thelaser regions for causing the laser array emitter to selectively produceflashes and optical data beams.
 20. The system of claim 18 wherein eachlaser region is electrically isolated within the single mesa structurerelative to the other laser regions of the single mesa structure. 21.The system of claim 18 wherein the second optical scope laser arraycomprises a plurality of the laser-emitting epitaxial structuresconfigured as a laser grid array.
 22. A method comprising: a light arrayemitter of a first optical scope emitting a flash toward a camera of asecond optical scope, the second optical scope further comprising aphotodetector array; the second optical scope camera capturing a cameraimage of the flash, wherein the camera image has a relationship with afield of view for the photodetector array; spatially localizing theflash in the camera image; determining an adjustment needed for aligninga central region of the photodetector array field of view with thespatially localized flash based on the relationship; and adjusting anorientation of the second optical scope based on the determinedadjustment.
 23. The method of claim 22 further comprising: defining acontrol signal for a positioning system that controllably the secondoptical scope orientation based on the determined adjustment; andwherein the adjusting step comprises adjusting the orientation of thesecond optical scope in response to the control signal being applied tothe positioning system.
 24. The method of claim 22 further comprising:repeating the method steps to achieve an alignment between the firstoptical scope and the second optical scope.
 25. The method of claim 22wherein the photodetector array and the camera of the second opticalscope are bore sighted so that the camera field of view and thephotodetector array field of view are commonly centered.
 26. The methodof claim 22 wherein the flash has a flash wavelength, the method furthercomprising: filtering the camera image or the incident light directed tothe camera to remove a plurality of wavelengths of light from the cameraimage of the incident light other than the flash wavelength.
 27. Themethod of claim 22 further comprising: the first optical scopetransmitting a light beam to the adjusted second optical scope, whereinthe light beam encodes data; the photodetector array of the adjustedsecond optical scope receiving the light beam and converting thereceived light beam into a signal representative of the data.
 28. Themethod of claim 22 wherein the first optical scope further comprises aphotodetector array and a camera, wherein the second optical scopefurther comprises a light emitter array, and the method furthercomprising: the first and second optical scopes repeating the methodsteps with their roles reversed so that the first optical scope isadjustably oriented based on a flash from the second optical scope. 29.The method of claim 28 further comprising: the adjusted first and secondoptical scopes bi-directionally communicating data to each other vialight beams emitted by their respective light emitter arrays.
 30. Themethod of claim 22 wherein the first optical scope laser array emittercomprises a plurality of laser subarrays that are arranged to produceflashes that are offset from a main optical axis of a line-of-sightcommunication link between the first and second optical scopes; andwherein the emitting step comprises the first optical scope sequencingthrough flashing of the laser subarrays to permit the second opticalscope to identify a laser subarray that is aligned with the secondoptical scope photodetector array.
 31. The method of claim 22 whereinthe first optical scope laser array emitter comprises a laser-emittingepitaxial structure, wherein the laser-emitting epitaxial structurecomprises a plurality of laser-emitting regions within a single mesastructure.
 32. The method of claim 31 wherein the first optical scopelaser array emitter further comprises an electrical waveguide configuredto provide a signal to the laser regions, the method further comprising:the electrical waveguide delivering signals to the laser-emittingepitaxial structure for causing the first optical scope laser arrayemitter to selectively produce flashes and optical data beams.
 33. Themethod of claim 31 wherein each laser region is electrically isolatedwithin the single mesa structure relative to the other laser regions ofthe single mesa structure.
 34. The method of claim 31 wherein the secondoptical scope laser array comprises a plurality of the laser-emittingepitaxial structures configured as a laser grid array.
 35. A method foraligning a line-of-sight communication link between a first opticalscope and a second optical scope, the method comprising: a light arrayemitter of a first optical scope emitting a flash toward a camera of asecond optical scope from a subarray of the light array emitter, whereinthe light array emitter comprises a plurality of subarrays, and whereinthe light array emitter is arranged to cause flashes produced by thesubarrays to exhibit different offsets relative to a main optical axisof the line-of-sight communication link, the second optical scopefurther comprising a photodetector array; the second optical scopecamera capturing a camera image of the flash, wherein the camera imagehas a relationship with a field of view for the photodetector array;spatially localizing the flash in the camera image; determining whetherthe subarray is aligned with a central region of the photodetector arrayfield of view based on the spatially localized flash and therelationship; in response to a determination that the subarray is notaligned with the central region of the photodetector field of view,sequencing to another subarray of the light array emitter and repeatingthe emitting, capturing, spatially localizing, and determining stepswith respect to the sequenced subarray until a sequenced subarray isfound that is aligned with the central region of the photodetector arrayfield of view.
 36. The method of claim 35 further comprising: thealigned subarray of the first optical scope optically communicating datato the photodetector array of the second optical scope.